IKFW75N65ES5XKSA1
Infineon Technologies

Infineon Technologies
IKFW75N65ES5XKSA1
$8.24
Available to order
Reference Price (USD)
1+
$8.24000
500+
$8.1576
1000+
$8.0752
1500+
$7.9928
2000+
$7.9104
2500+
$7.828
Exquisite packaging
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Discover the IKFW75N65ES5XKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IKFW75N65ES5XKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IKFW75N65ES5XKSA1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
- Power - Max: 148 W
- Switching Energy: 1.48mJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 144 nC
- Td (on/off) @ 25°C: 24ns/152ns
- Test Condition: 400V, 60A, 8Ohm, 15V
- Reverse Recovery Time (trr): 71 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-HSIP247-3-2