IKD03N60RF
Infineon Technologies
Infineon Technologies
IGBT 600V 5A 53.6W TO252-3
$0.81
Available to order
Reference Price (USD)
1+
$0.81000
500+
$0.8019
1000+
$0.7938
1500+
$0.7857
2000+
$0.7776
2500+
$0.7695
Exquisite packaging
Discount
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The IKD03N60RF Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IKD03N60RF ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IKD03N60RF into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 5 A
- Current - Collector Pulsed (Icm): 7.5 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
- Power - Max: 53.6 W
- Switching Energy: 90µJ
- Input Type: Standard
- Gate Charge: 17.1 nC
- Td (on/off) @ 25°C: 10ns/128ns
- Test Condition: 400V, 2.5A, 68Ohm, 15V
- Reverse Recovery Time (trr): 31 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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