RGW80TS65GC11
Rohm Semiconductor
Rohm Semiconductor
650V 40A FIELD STOP TRENCH IGBT
$5.46
Available to order
Reference Price (USD)
1+
$4.40000
10+
$3.95100
25+
$3.73520
100+
$3.23700
450+
$3.07100
900+
$2.75560
1,350+
$2.32400
Exquisite packaging
Discount
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Experience top-tier performance with the RGW80TS65GC11 Single IGBT transistor from Rohm Semiconductor. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the RGW80TS65GC11 ensures energy efficiency and reliability. Trust Rohm Semiconductor's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 78 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 214 W
- Switching Energy: 760µJ (on), 720µJ (off)
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 44ns/143ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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