SKB02N60E3266ATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 6A 30W TO263-3
$0.60
Available to order
Reference Price (USD)
1+
$0.60000
500+
$0.594
1000+
$0.588
1500+
$0.582
2000+
$0.576
2500+
$0.57
Exquisite packaging
Discount
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Enhance your electronic projects with the SKB02N60E3266ATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the SKB02N60E3266ATMA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose SKB02N60E3266ATMA1 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 6 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
- Power - Max: 30 W
- Switching Energy: 64µJ
- Input Type: Standard
- Gate Charge: 14 nC
- Td (on/off) @ 25°C: 20ns/259ns
- Test Condition: 400V, 2A, 118Ohm, 15V
- Reverse Recovery Time (trr): 130 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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