IKD06N60RC2ATMA1
Infineon Technologies
Infineon Technologies
IKD06N60RC2ATMA1
$1.19
Available to order
Reference Price (USD)
1+
$1.19000
500+
$1.1781
1000+
$1.1662
1500+
$1.1543
2000+
$1.1424
2500+
$1.1305
Exquisite packaging
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Experience top-tier performance with the IKD06N60RC2ATMA1 Single IGBT transistor from Infineon Technologies. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the IKD06N60RC2ATMA1 ensures energy efficiency and reliability. Trust Infineon Technologies's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 11.7 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
- Power - Max: 51.7 W
- Switching Energy: 170µJ (on), 80µJ (off)
- Input Type: Standard
- Gate Charge: 31 nC
- Td (on/off) @ 25°C: 6ns/129ns
- Test Condition: 400V, 6A, 49Ohm, 15V
- Reverse Recovery Time (trr): 98 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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