IKW15N120BH6XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200 V 15A TO247-3-46
$3.83
Available to order
Reference Price (USD)
1+
$5.93000
10+
$5.36200
240+
$4.46158
720+
$3.85440
1,200+
$3.31004
Exquisite packaging
Discount
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Enhance your electronic projects with the IKW15N120BH6XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKW15N120BH6XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKW15N120BH6XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
- Power - Max: 200 W
- Switching Energy: 700µJ (on), 550µJ (off)
- Input Type: Standard
- Gate Charge: 92 nC
- Td (on/off) @ 25°C: 18ns/240ns
- Test Condition: 600V, 15A, 22Ohm, 15V
- Reverse Recovery Time (trr): 340 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
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