IXXH75N60C3D1
IXYS
IXYS
IGBT 600V 150A 750W TO247
$12.83
Available to order
Reference Price (USD)
30+
$9.32033
Exquisite packaging
Discount
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Upgrade your power management systems with the IXXH75N60C3D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXXH75N60C3D1 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXXH75N60C3D1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
- Power - Max: 750 W
- Switching Energy: 1.6mJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 107 nC
- Td (on/off) @ 25°C: 35ns/90ns
- Test Condition: 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
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