IHW30N65R5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 60A TO247-3
$3.61
Available to order
Reference Price (USD)
1+
$4.00000
10+
$3.61700
240+
$3.00967
720+
$2.60008
1,200+
$2.23287
Exquisite packaging
Discount
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Enhance your electronic projects with the IHW30N65R5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IHW30N65R5XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IHW30N65R5XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
- Power - Max: 176 W
- Switching Energy: 850µJ (on), 240µJ (off)
- Input Type: Standard
- Gate Charge: 153 nC
- Td (on/off) @ 25°C: 29ns/220ns
- Test Condition: 400V, 30A, 13Ohm, 15V
- Reverse Recovery Time (trr): 95 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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