HGT1S12N60C3R
Harris Corporation
Harris Corporation
24A, 600V N-CHANNEL IGBT
$1.21
Available to order
Reference Price (USD)
1+
$1.21000
500+
$1.1979
1000+
$1.1858
1500+
$1.1737
2000+
$1.1616
2500+
$1.1495
Exquisite packaging
Discount
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The HGT1S12N60C3R Single IGBT transistor by Harris Corporation is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The HGT1S12N60C3R ensures precise power control and long-term stability. With Harris Corporation's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate HGT1S12N60C3R into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 48 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: 400µJ (on), 340µJ (off)
- Input Type: Standard
- Gate Charge: 71 nC
- Td (on/off) @ 25°C: 37ns/120ns
- Test Condition: 480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
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