IGD06N65T6ARMA1
Infineon Technologies
Infineon Technologies
HOME APPLIANCES 14 PG-TO252-3
$0.55
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Reference Price (USD)
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$0.55100
500+
$0.54549
1000+
$0.53998
1500+
$0.53447
2000+
$0.52896
2500+
$0.52345
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The IGD06N65T6ARMA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IGD06N65T6ARMA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IGD06N65T6ARMA1 into your projects for superior results.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 9 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
- Power - Max: 31 W
- Switching Energy: 60µJ (on), 30µJ (off)
- Input Type: Standard
- Gate Charge: 13.7 nC
- Td (on/off) @ 25°C: 15ns/35ns
- Test Condition: 400V, 3A, 47Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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