IKB20N60H3ATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 40A 170W TO263-3
$3.12
Available to order
Reference Price (USD)
1,000+
$1.53718
Exquisite packaging
Discount
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The IKB20N60H3ATMA1 by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the IKB20N60H3ATMA1 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Power - Max: 170 W
- Switching Energy: 690µJ
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 16ns/194ns
- Test Condition: 400V, 20A, 14.6Ohm, 15V
- Reverse Recovery Time (trr): 112 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
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