IXGA30N120B3-TRL
IXYS
IXYS
IXGA30N120B3 TRL
$5.03
Available to order
Reference Price (USD)
1+
$5.02971
500+
$4.9794129
1000+
$4.9291158
1500+
$4.8788187
2000+
$4.8285216
2500+
$4.7782245
Exquisite packaging
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Optimize your power systems with the IXGA30N120B3-TRL Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXGA30N120B3-TRL delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
- Power - Max: 300 W
- Switching Energy: 3.47mJ (on), 2.16mJ (off)
- Input Type: Standard
- Gate Charge: 87 nC
- Td (on/off) @ 25°C: 16ns/127ns
- Test Condition: 960V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
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