AIKW50N65RF5XKSA1
Infineon Technologies
Infineon Technologies
SIC_DISCRETE
$10.44
Available to order
Reference Price (USD)
1+
$10.44000
500+
$10.3356
1000+
$10.2312
1500+
$10.1268
2000+
$10.0224
2500+
$9.918
Exquisite packaging
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The AIKW50N65RF5XKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The AIKW50N65RF5XKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate AIKW50N65RF5XKSA1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 250 W
- Switching Energy: 310µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 109 nC
- Td (on/off) @ 25°C: 20ns/156ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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