STGWT30H65FB
STMicroelectronics
STMicroelectronics
IGBT 650V 30A 260W TO3PL
$3.32
Available to order
Reference Price (USD)
1+
$3.90000
30+
$3.34400
120+
$2.93117
510+
$2.53224
1,020+
$2.17460
2,520+
$2.08290
Exquisite packaging
Discount
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Discover the STGWT30H65FB Single IGBT transistor by STMicroelectronics, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the STGWT30H65FB ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the STGWT30H65FB for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 260 W
- Switching Energy: 151µJ (on), 293µJ (off)
- Input Type: Standard
- Gate Charge: 149 nC
- Td (on/off) @ 25°C: 37ns/146ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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