IGW03N120H2FKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 9.6A 62.5W TO247-3
$2.56
Available to order
Reference Price (USD)
240+
$2.34379
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the IGW03N120H2FKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IGW03N120H2FKSA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IGW03N120H2FKSA1 for your critical power needs.
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 9.6 A
- Current - Collector Pulsed (Icm): 9.9 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
- Power - Max: 62.5 W
- Switching Energy: 290µJ
- Input Type: Standard
- Gate Charge: 22 nC
- Td (on/off) @ 25°C: 9.2ns/281ns
- Test Condition: 800V, 3A, 82Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
Related Products
Infineon Technologies
AIKW50N65RF5XKSA1
STMicroelectronics
STGW50NC60W
STMicroelectronics
STGWT30H65FB
IXYS
IXGA30N120B3-TRL
onsemi
FGA25N120ANTDTU-F109
Infineon Technologies
IKZ75N65ES5XKSA1
STMicroelectronics
STGWA15M120DF3
STMicroelectronics
STGFL6NC60D
Infineon Technologies
IRG4IBC30SPBF
IXYS