STGD10HF60KD
STMicroelectronics
STMicroelectronics
IGBT 600V 10A DPAK
$2.36
Available to order
Reference Price (USD)
2,500+
$1.03523
5,000+
$1.02396
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the STGD10HF60KD Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGD10HF60KD provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGD10HF60KD for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 18 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 5A
- Power - Max: 62.5 W
- Switching Energy: 45µJ (on), 105µJ (off)
- Input Type: Standard
- Gate Charge: 23 nC
- Td (on/off) @ 25°C: 9.5ns/87ns
- Test Condition: 400V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
Related Products
Infineon Technologies
IGD06N65T6ARMA1
IXYS
IXGT16N170
Renesas Electronics America Inc
RJH60D3DPE-00#J3
onsemi
NGB8202NT4G
Infineon Technologies
IKB20N60H3ATMA1
Infineon Technologies
AIGW40N65H5XKSA1
Fairchild Semiconductor
FGD3040G2
IXYS
IXBH24N170
IXYS
IXYP8N90C3D1
Infineon Technologies