STGP8M120DF3
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 1200 V,
$3.56
Available to order
Reference Price (USD)
1+
$3.55740
500+
$3.521826
1000+
$3.486252
1500+
$3.450678
2000+
$3.415104
2500+
$3.37953
Exquisite packaging
Discount
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The STGP8M120DF3 Single IGBT transistor by STMicroelectronics is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the STGP8M120DF3 provides consistent performance in varied conditions. Rely on STMicroelectronics's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 32 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
- Power - Max: -
- Switching Energy: 390µJ (on), 370µJ (Off)
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 20ns/126ns
- Test Condition: 600V, 8A, 33Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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