IKQ50N120CH3XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 100A TO247-3-46
$13.04
Available to order
Reference Price (USD)
1+
$13.32000
10+
$12.32600
240+
$10.57383
720+
$9.52288
1,200+
$8.84167
Exquisite packaging
Discount
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Enhance your electronic projects with the IKQ50N120CH3XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKQ50N120CH3XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKQ50N120CH3XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
- Power - Max: 652 W
- Switching Energy: 3mJ (on), 1.9mJ (off)
- Input Type: Standard
- Gate Charge: 235 nC
- Td (on/off) @ 25°C: 34ns/297ns
- Test Condition: 600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-46
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