IKW03N120H
Infineon Technologies
Infineon Technologies
IGBT WITH ANTI-PARALLEL DIODE
$1.23
Available to order
Reference Price (USD)
1+
$1.23000
500+
$1.2177
1000+
$1.2054
1500+
$1.1931
2000+
$1.1808
2500+
$1.1685
Exquisite packaging
Discount
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Upgrade your power management systems with the IKW03N120H Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IKW03N120H provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IKW03N120H for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 9.6 A
- Current - Collector Pulsed (Icm): 9.9 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
- Power - Max: 62.5 W
- Switching Energy: 140µJ (on), 150µJ (off)
- Input Type: Standard
- Gate Charge: 22 nC
- Td (on/off) @ 25°C: 9.2ns/281ns
- Test Condition: 800V, 3A, 82Ohm, 15V
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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