IKW40N65ET7XKSA1
Infineon Technologies
Infineon Technologies
IKW40N65ET7XKSA1
$5.24
Available to order
Reference Price (USD)
1+
$5.24000
500+
$5.1876
1000+
$5.1352
1500+
$5.0828
2000+
$5.0304
2500+
$4.978
Exquisite packaging
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The IKW40N65ET7XKSA1 Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IKW40N65ET7XKSA1 ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IKW40N65ET7XKSA1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 76 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
- Power - Max: 230.8 W
- Switching Energy: 1.05mJ (on), 590µJ (off)
- Input Type: Standard
- Gate Charge: 235 nC
- Td (on/off) @ 25°C: 20ns/310ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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