IKW75N65SS5XKSA1
Infineon Technologies
Infineon Technologies
INDUSTRY 14
$16.14
Available to order
Reference Price (USD)
1+
$16.14000
500+
$15.9786
1000+
$15.8172
1500+
$15.6558
2000+
$15.4944
2500+
$15.333
Exquisite packaging
Discount
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Optimize your power systems with the IKW75N65SS5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IKW75N65SS5XKSA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 450µJ (on), 750µJ (off)
- Input Type: Standard
- Gate Charge: 164 nC
- Td (on/off) @ 25°C: 22ns/145ns
- Test Condition: 400V, 75A, 5.6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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