IMBG120R030M1HXTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 56A TO263
$25.45
Available to order
Reference Price (USD)
1+
$25.45000
500+
$25.1955
1000+
$24.941
1500+
$24.6865
2000+
$24.432
2500+
$24.1775
Exquisite packaging
Discount
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Upgrade your designs with the IMBG120R030M1HXTMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IMBG120R030M1HXTMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 11.5mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
- Vgs (Max): +18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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