IMBG120R060M1HXTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1.2KV 36A TO263
$17.71
Available to order
Reference Price (USD)
1+
$17.71000
500+
$17.5329
1000+
$17.3558
1500+
$17.1787
2000+
$17.0016
2500+
$16.8245
Exquisite packaging
Discount
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Meet the IMBG120R060M1HXTMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IMBG120R060M1HXTMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 83mOhm @ 13A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
- Vgs (Max): +18V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1145 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 181W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-12
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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