IPA60R190C6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 20.2A TO220-FP
$4.24
Available to order
Reference Price (USD)
1+
$3.45000
10+
$3.10500
100+
$2.58170
500+
$2.12870
1,000+
$1.82671
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the IPA60R190C6XKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPA60R190C6XKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
Related Products
IXYS
IXFK98N50P3
onsemi
FDD4N60NZ
Toshiba Semiconductor and Storage
SSM3K7002KF,LF
Vishay Siliconix
IRFB9N60APBF
Infineon Technologies
IPB180N04S4L01ATMA1
Infineon Technologies
IPP076N12N3GXKSA1
Harris Corporation
RFD16N05LSM
Toshiba Semiconductor and Storage
SSM3J66MFV,L3XHF
Alpha & Omega Semiconductor Inc.
AOWF360A70
Alpha & Omega Semiconductor Inc.