IPA65R280C6XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 13.8A TO220
$2.18
Available to order
Reference Price (USD)
500+
$1.67898
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPA65R280C6XKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPA65R280C6XKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-111
- Package / Case: TO-220-3 Full Pack
Related Products
Texas Instruments
CSD25485F5
STMicroelectronics
STFW69N65M5
Vishay Siliconix
SQ3481EV-T1_GE3
Diotec Semiconductor
DI020N06D1
Microchip Technology
APTM20DAM05G
Infineon Technologies
IRFU4615PBF
STMicroelectronics
STP40N65M2
Alpha & Omega Semiconductor Inc.
AON7458
Diodes Incorporated
ZXMN10B08E6TA
Panjit International Inc.