IPA65R310CFDXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 11.4A TO220
$3.18
Available to order
Reference Price (USD)
500+
$1.54232
Exquisite packaging
Discount
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The IPA65R310CFDXKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPA65R310CFDXKSA1 for their critical applications.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-111
- Package / Case: TO-220-3 Full Pack
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