IRL100HS121
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 11A 6PQFN
$1.34
Available to order
Reference Price (USD)
4,000+
$0.46416
8,000+
$0.44350
12,000+
$0.42874
Exquisite packaging
Discount
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Upgrade your designs with the IRL100HS121 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IRL100HS121 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 11.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-PQFN Dual (2x2)
- Package / Case: 6-PowerVDFN
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