IPA80R750P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CHANNEL 800V 7A TO220
$2.18
Available to order
Reference Price (USD)
1+
$1.86000
10+
$1.64600
100+
$1.30110
500+
$1.00906
1,000+
$0.79662
Exquisite packaging
Discount
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The IPA80R750P7XKSA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPA80R750P7XKSA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 27W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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