Shopping cart

Subtotal: $0.00

YJB200G06B-F2-0000HF

Yangzhou Yangjie Electronic Technology Co.,Ltd
YJB200G06B-F2-0000HF Preview
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 200A TO-263
$1.88
Available to order
Reference Price (USD)
1+
$1.88000
500+
$1.8612
1000+
$1.8424
1500+
$1.8236
2000+
$1.8048
2500+
$1.786
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Vishay Siliconix

SISH410DN-T1-GE3

Panjit International Inc.

PJE8439_R1_00001

Renesas Electronics America Inc

RJK4007DPP-00#T2

Vishay Siliconix

SUD40151EL-GE3

Toshiba Semiconductor and Storage

TK16J60W,S1VE

Infineon Technologies

IRFHM830TRPBF

Vishay Siliconix

SIHB30N60ET5-GE3

Infineon Technologies

IRFH7545TRPBF

Diodes Incorporated

DMN65D8LQ-13

Top