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IPA90R800C3XKSA2

Infineon Technologies
IPA90R800C3XKSA2 Preview
Infineon Technologies
MOSFET N-CH 900V 6.9A TO220
$2.01
Available to order
Reference Price (USD)
1+
$2.01390
500+
$1.993761
1000+
$1.973622
1500+
$1.953483
2000+
$1.933344
2500+
$1.913205
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 460µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack

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