IPAN80R450P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 11A TO220-3-31
$2.97
Available to order
Reference Price (USD)
1+
$2.38000
10+
$2.15600
100+
$1.75730
500+
$1.39462
1,000+
$1.17703
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPAN80R450P7XKSA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPAN80R450P7XKSA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 220µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-FP
- Package / Case: TO-220-3 Full Pack
Related Products
Vishay Siliconix
SI4153DY-T1-GE3
Renesas Electronics America Inc
UPA572T(0)-T1-A
Motorola
NTB6N60T4
IXYS
IXFT120N25X3HV
Diodes Incorporated
DMTH6010SCT
Vishay Siliconix
SIS406DN-T1-GE3
Vishay Siliconix
SQ2337ES-T1_GE3
Infineon Technologies
IPB320N20N3GATMA1
IXYS
IXFH130N15X3
Rohm Semiconductor