IPB025N10N3GE8187ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 180A TO263-7
$4.24
Available to order
Reference Price (USD)
1,000+
$3.26465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IPB025N10N3GE8187ATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPB025N10N3GE8187ATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
Diodes Incorporated
DMN2080UCB4-7
IXYS
IXTU01N100
Vishay Siliconix
IRF530PBF-BE3
Vishay Siliconix
IRFR420APBF
Vishay Siliconix
IRFU430APBF
Vishay Siliconix
SI7110DN-T1-E3
Rohm Semiconductor
RSQ030N08HZGTR
Infineon Technologies
IPA60R1K0CEXKSA1
Infineon Technologies
IRFB7430PBF
Infineon Technologies