IPB120P04P404ATMA2
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 120A TO263-3
$4.14
Available to order
Reference Price (USD)
1+
$4.14000
500+
$4.0986
1000+
$4.0572
1500+
$4.0158
2000+
$3.9744
2500+
$3.933
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IPB120P04P404ATMA2 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPB120P04P404ATMA2 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
FCB260N65S3
Microchip Technology
APT6015LVFRG
Microchip Technology
APT20M18LVRG
Toshiba Semiconductor and Storage
TJ80S04M3L(T6L1,NQ
Infineon Technologies
IPP70N10S312AKSA1
STMicroelectronics
STP2N80K5
Fairchild Semiconductor
FQA8N90C
Toshiba Semiconductor and Storage
SSM6J50TU,LF
Renesas Electronics America Inc
UPA651TT-E1-A
Vishay Siliconix