IPB60R165CPATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 21A TO263-3
$6.49
Available to order
Reference Price (USD)
1,000+
$2.46785
2,000+
$2.34446
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IPB60R165CPATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPB60R165CPATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 165mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IRF2804PBF
Vishay Siliconix
SQJ460AEP-T2_GE3
Vishay Siliconix
SIHG21N60EF-GE3
Infineon Technologies
IRF8304MTRPBF
Vishay Siliconix
IRF9Z30PBF-BE3
STMicroelectronics
STD100N3LF3
onsemi
NVMFS5C410NAFT3G
Infineon Technologies
IRFS52N15DTRRP
Diodes Incorporated
DMTH6016LFDFWQ-13
Fairchild Semiconductor