IPB90N06S4L04ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 90A TO263-3
$3.31
Available to order
Reference Price (USD)
1,000+
$1.31635
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPB90N06S4L04ATMA2 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPB90N06S4L04ATMA2 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
IXYS
IXFN140N20P
Infineon Technologies
AUIRFS3004-7P
STMicroelectronics
SCTWA30N120
Nexperia USA Inc.
PMV42ENER
STMicroelectronics
STF11NM60ND
onsemi
NTP095N65S3H
Texas Instruments
CSD17579Q5AT
Vishay Siliconix
SI7106DN-T1-GE3
STMicroelectronics
STF42N60M2-EP
Microchip Technology