IPD60R360PFD7SAUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 10A TO252-3
$1.61
Available to order
Reference Price (USD)
1+
$1.61000
500+
$1.5939
1000+
$1.5778
1500+
$1.5617
2000+
$1.5456
2500+
$1.5295
Exquisite packaging
Discount
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The IPD60R360PFD7SAUMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPD60R360PFD7SAUMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 43W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-344
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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