IPD60R950C6ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 4.4A TO252-3
$1.58
Available to order
Reference Price (USD)
2,500+
$0.53994
5,000+
$0.51590
12,500+
$0.49874
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPD60R950C6ATMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Diodes Incorporated
DMN1019UVT-13
Vishay Siliconix
IRFZ14SPBF
Renesas Electronics America Inc
RJK60S4DPP-E0#T2
Renesas Electronics America Inc
RJK1525DPP-MG#T2
Toshiba Semiconductor and Storage
TPN4R806PL,L1Q
IXYS
IXTA150N15X4-7
Vishay Siliconix
SUD40N10-25-E3
Vishay Siliconix
SIHA17N80AEF-GE3
Vishay Siliconix
SIHFR9310TR-GE3
Vishay Siliconix