IPD95R1K2P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 950V 6A TO252-3
$1.87
Available to order
Reference Price (USD)
2,500+
$0.75618
5,000+
$0.72253
12,500+
$0.69849
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPD95R1K2P7ATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPD95R1K2P7ATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPD135N03LGBTMA1
Toshiba Semiconductor and Storage
TK9P65W,RQ
Infineon Technologies
ISC0703NLSATMA1
Nexperia USA Inc.
BUK7208-40B,118
Infineon Technologies
IRFH5300TRPBF
Rohm Semiconductor
RD3U040CNTL1
onsemi
FDS3572
Vishay Siliconix
IRLZ24PBF
STMicroelectronics
STP52N25M5
Infineon Technologies