IPG16N10S461AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 100V 16A 8TDSON
$0.63
Available to order
Reference Price (USD)
5,000+
$0.40905
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the IPG16N10S461AATMA1, a premium Transistors - FETs, MOSFETs - Arrays product from Infineon Technologies. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the IPG16N10S461AATMA1 delivers consistent and reliable operation. Infineon Technologies's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 16A
- Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 9µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
- Power - Max: 29W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
Related Products
onsemi
HUFA76407DK8T-F085
Diodes Incorporated
DMG6601LVT-7
Diodes Incorporated
DMN62D4LDW-7
Alpha & Omega Semiconductor Inc.
AON6994
Diodes Incorporated
DMP2160UFDBQ-7
onsemi
ECH8675-TL-H
Advanced Linear Devices Inc.
ALD110900ASAL
Advanced Linear Devices Inc.
ALD110900APAL
Rohm Semiconductor
QH8KC5TCR
Vishay Siliconix