IPG20N06S2L65ATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 55V 20A TDSON-8-4
$1.11
Available to order
Reference Price (USD)
1+
$1.11000
500+
$1.0989
1000+
$1.0878
1500+
$1.0767
2000+
$1.0656
2500+
$1.0545
Exquisite packaging
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Enhance your circuit designs with the IPG20N06S2L65ATMA1, a premium Transistors - FETs, MOSFETs - Arrays product from Infineon Technologies. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the IPG20N06S2L65ATMA1 delivers consistent and reliable operation. Infineon Technologies's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
- Power - Max: 43W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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