IPG20N06S4L14AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 60V 20A 8TDSON
$0.87
Available to order
Reference Price (USD)
5,000+
$0.63421
Exquisite packaging
Discount
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The IPG20N06S4L14AATMA1 by Infineon Technologies is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the IPG20N06S4L14AATMA1 offers superior functionality and longevity. Trust Infineon Technologies to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
- Power - Max: 50W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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