IPG20N10S4L22AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 100V 20A TDSON-8
$1.92
Available to order
Reference Price (USD)
5,000+
$0.80538
10,000+
$0.78848
Exquisite packaging
Discount
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The IPG20N10S4L22AATMA1 from Infineon Technologies is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the IPG20N10S4L22AATMA1 provides reliable performance in demanding environments. Choose Infineon Technologies for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 22mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1755pF @ 25V
- Power - Max: 60W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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