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IPI120N04S401AKSA1

Infineon Technologies
IPI120N04S401AKSA1 Preview
Infineon Technologies
MOSFET N-CH 40V 120A TO262-3
$2.52
Available to order
Reference Price (USD)
500+
$1.87840
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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