IPI60R125CPXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 25A TO262-3
$5.60
Available to order
Reference Price (USD)
1+
$6.77000
10+
$6.04700
100+
$4.95850
500+
$4.01520
1,000+
$3.38631
Exquisite packaging
Discount
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The IPI60R125CPXKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPI60R125CPXKSA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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