IPI65R310CFDXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 11.4A TO262-3
$0.89
Available to order
Reference Price (USD)
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$0.89000
500+
$0.8811
1000+
$0.8722
1500+
$0.8633
2000+
$0.8544
2500+
$0.8455
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Discover the IPI65R310CFDXKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPI65R310CFDXKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 104.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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