IPI70N10S3L12AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 70A TO262-3
$0.61
Available to order
Reference Price (USD)
1+
$0.61000
500+
$0.6039
1000+
$0.5978
1500+
$0.5917
2000+
$0.5856
2500+
$0.5795
Exquisite packaging
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Enhance your electronic projects with the IPI70N10S3L12AKSA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPI70N10S3L12AKSA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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