IPI80P03P4-05AKSA1
Infineon Technologies
Infineon Technologies
P-CHANNEL POWER MOSFET
$0.73
Available to order
Reference Price (USD)
1+
$0.73000
500+
$0.7227
1000+
$0.7154
1500+
$0.7081
2000+
$0.7008
2500+
$0.6935
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPI80P03P4-05AKSA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPI80P03P4-05AKSA1 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 253µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 137W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Toshiba Semiconductor and Storage
SSM6J801R,LF
PN Junction Semiconductor
P3M06300D5
Infineon Technologies
IPZ60R041P6FKSA1
onsemi
NTMFS5C670NT1G
STMicroelectronics
STB27NM60ND
Vishay Siliconix
SIHA15N50E-GE3
Nexperia USA Inc.
BUK9M14-40EX
Infineon Technologies
ISZ230N10NM6ATMA1
Renesas Electronics America Inc
2SK2729-E
Fairchild Semiconductor