IPL65R1K5C6SATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 3A THIN-PAK
$0.85
Available to order
Reference Price (USD)
5,000+
$0.49142
Exquisite packaging
Discount
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The IPL65R1K5C6SATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPL65R1K5C6SATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 26.6W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-2
- Package / Case: 8-PowerTDFN
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