NTMJS0D7N03CGTWG
onsemi
onsemi
WIDE SOA
$3.58
Available to order
Reference Price (USD)
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$3.58208
500+
$3.5462592
1000+
$3.5104384
1500+
$3.4746176
2000+
$3.4387968
2500+
$3.402976
Exquisite packaging
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The NTMJS0D7N03CGTWG from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NTMJS0D7N03CGTWG offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 59A (Ta), 410A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 650µOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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