IPLK60R1K5PFD7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 3.8A THIN-PAK
$1.39
Available to order
Reference Price (USD)
1+
$1.39000
500+
$1.3761
1000+
$1.3622
1500+
$1.3483
2000+
$1.3344
2500+
$1.3205
Exquisite packaging
Discount
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The IPLK60R1K5PFD7ATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPLK60R1K5PFD7ATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-52
- Package / Case: 8-PowerTDFN
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